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  Datasheet File OCR Text:
 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTC3198
TRANSISTORNPN (c)
TO 92
FEATURE Power dissipation PCM : 0.625 W Tamb=25ae(c) Collector current ICM : 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range T stg: -55aeto +150ae TJ : 150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO
1.EMITTER
2. COLLECTOR
3. BASE
123
unless
Test
otherwise
MIN 60 50 5
specified(c)
TYP MAX UNIT V V V 0.1 0.1 |I A |I A
conditions
Ic= 100|I IE=0 A IC=5 mA , IB=0 IE= 100|I AIC=0 VCB=60V , IE=0 VEB= 5V , IC=0
hFE(1)
DC current gain
VCE=6 V, IC= 2mA VCE=6 V, IC= 150m A IC= 100mA, IB= 10 mA IC= 100mA, IB= 10 mA VCE= 10 V, IC= 1mA
70 25 100 0.1
700
hFE(2)
Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat)
0.25 1
V V
Transition frequency
f
T
80 F=30MHz
MHz
CLASSIFICATION OF hFE(1)
Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C


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